Vertical SOI trench SONOS cell
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United States of America Patent
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Aug 30, 2011
Grant Date -
Sep 10, 2009
app pub date -
Mar 25, 2009
filing date -
Nov 28, 2005
priority date (Note) -
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Abstract
A semiconductor memory device in which a vertical trench semiconductor-oxide-nitride-oxide-semiconductor (SONOS) memory cell is created in a semiconductor-on-insulator (SOI) substrate is provided that allows for the integration of dense non-volatile random access memory (NVRAM) cells in SOI-based complementary metal oxide semiconductor (CMOS) technology. The trench is processed using conventional trench processing and it is processed near the beginning of the inventive method that allows for the fabrication of the memory cell to be fully separated from SOI logic processing.
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