Characterization technique for dielectric properties of polymers
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United States of America Patent
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Aug 30, 2011
Grant Date -
Mar 18, 2010
app pub date -
Mar 23, 2006
filing date -
Mar 25, 2005
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Abstract
A test structure for polymer characterization over a wide frequency range, temperature range and under an applied DC electric field is disclosed. A high resistivity silicon substrate is topped by an adhesion layer. A polymer thin-film is deposited on a patterned metal1 layer which is deposited on top of the adhesion layer. A top metal2 layer is deposited on the polymer thin-film and patterned to form a CPW transmission line. A single bias voltage is applied to the center conductor of the CPW transmission line on metal2 and influences dielectric properties of the polymer. The dielectric permittivity and the loss-tangent of the polymer can be derived as functions of electric field and temperature by measuring the swept frequency scattering parameters and matching the experimental frequency response to the modeled frequency response. The electrical conductance properties of the polymer can be accurately characterized using the test structure over a wide temperature range.
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Patent Owner(s)
| Patent Owner | Address | |
|---|---|---|
| UNIVERSITY OF DAYTON | 300 COLLEGE PARK DAYTON OH 45469 |
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Inventor(s)
| Inventor Name | Address | # of filed Patents | Total Citations |
|---|---|---|---|
| Subramanyam, Guru | Dayton, US | 17 | 159 |
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| Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
| Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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