States encoding in multi-bit flash cells for optimizing error rate

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United States of America Patent

PATENT NO 8010755
APP PUB NO 20090113120A1
SERIAL NO

12346676

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Abstract

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To store N bits of M≧2 logical pages, the bits are interleaved and the interleaved bits are programmed to [N/M] memory cells, M bits per cell. Preferably, the interleaving puts the same number of bits from each logical page into each bit-page of the [N/M] cells. When the bits are read from the cells, the bits are de-interleaved. The interleaving may be deterministic or random, and may be effected by software or by dedicated hardware.

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Patent Owner(s)

Patent OwnerAddress
SANDISK IL LTDISRAEL SAABA KFAR SABA CENTRAL DISTRICT

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Murin, Mark Kfar-Saba, IL 46 2448

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