Methods of fabricating stack type capacitors of semiconductor devices
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United States of America Patent
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Sep 6, 2011
Grant Date -
Jan 14, 2010
app pub date -
May 15, 2009
filing date -
Jul 10, 2008
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Abstract
Provided are methods of fabricating capacitors of semiconductor devices, the methods including: forming a lower electrode on a semiconductor substrate, performing a pre-process operation on the lower electrode for suppressing deterioration of the lower electrode during a process, forming a dielectric layer on the lower electrode using a source gas and an ozone gas, and forming an upper electrode on the dielectric layer, wherein the pre-process operation and the forming of the dielectric layer may be performed in one device capable of atomic layer deposition.
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