System and method for programming cells in non-volatile integrated memory devices
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United States of America Patent
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Sep 6, 2011
Grant Date -
Feb 18, 2010
app pub date -
Oct 23, 2009
filing date -
Aug 2, 2005
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Abstract
A system and method for quickly and efficiently programming hard-to-program storage elements in non-volatile integrated memory devices is presented. A number of storage elements are simultaneously subjected to a programming process with the current flowing through the storage elements limited to a first level. As a portion of these storage elements reach a prescribed state, they are removed from the set of cells being programmed and the current limit on the elements that continue to be programmed is raised. The current level in these hard-to-program cells can be raised to a second, higher limit or unregulated. According to another aspect, during a program operation the current limit allowed for a cell depends upon the target state to which it is to be programmed.
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