Method of making a liquid crystal display device capable of increasing capacitance of storage capacitor
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United States of America Patent
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Sep 13, 2011
Grant Date -
Apr 2, 2009
app pub date -
Dec 1, 2008
filing date -
May 27, 2004
priority date (Note) -
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Abstract
A thin film transistor substrate and a fabricating method simplify a process and enlarge a capacitance value of a storage capacitor without any reduction of aperture ratio. A transparent first conductive layer and an opaque second conductive layer of a double-layer structured gate line are formed having a step coverage. A pixel electrode is provided on the gate insulating film within a pixel hole of said pixel area passing through the passivation film to be connected to the thin film transistor. A storage capacitor overlaps with the pixel electrode with having the gate insulating film therebetween and has a lower storage electrode protruded from the first conductive layer.
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