Heat transfer device
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United States of America Patent
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Sep 13, 2011
Grant Date -
Aug 6, 2009
app pub date -
Jan 31, 2008
filing date -
Jan 31, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.
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