Method of managing a multi-bit-cell flash memory
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United States of America Patent
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Sep 13, 2011
Grant Date -
Aug 18, 2005
app pub date -
Apr 23, 2004
filing date -
Feb 15, 2004
priority date (Note) -
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Abstract
A flash memory that supports N>1-bit programming is managed by, for at least one block of the memory, selecting the value of N to use for the block, designating one or more cells of the block as flag cells, and programming the flag cells to represent the selected value of N. Preferably, N is encoded according to whether the threshold voltages of the flag cells are greater or less than a reference voltage common to all values of N. The other cells of the block then are programmed in accordance with the selected value of N. N and its flag cells are selected when the block is first used to store data. Subsequent to an erasure of the block, a different value of N may be selected.
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