Nonvolatile memory device and method for fabricating the same
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United States of America Patent
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Sep 20, 2011
Grant Date -
Oct 15, 2009
app pub date -
Jun 22, 2009
filing date -
Dec 29, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A nonvolatile (e.g., flash) memory device includes a substrate having a plurality of isolation areas and active areas; a trench formed on the isolation area; a first electrode layer formed on an inner wall of the trench; a first gate oxide layer formed between the inner wall of the trench and the first electrode layer; a junction area formed on the active area; a second gate oxide layer formed on the entire surface of the substrate including the first electrode layer, the first gate oxide layer, the trench and the junction area; a tunnel oxide layer formed on a part of the second gate oxide layer corresponding to the active area; and a second electrode layer formed on the active area and in the trench.
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