PIN diode structure with zinc diffusion region
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United States of America Patent
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Sep 20, 2011
Grant Date -
Sep 17, 2009
app pub date -
Apr 8, 2009
filing date -
Sep 20, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, and a first type window layer disposed over the intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer is disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.
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