Ultrafine-grain-copper-base sputter targets
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United States of America Patent
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Sep 27, 2011
Grant Date -
Jun 23, 2005
app pub date -
Dec 23, 2004
filing date -
Jul 18, 2002
priority date (Note) -
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Abstract
The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 μm for improving sputter uniformity and reducing sputter target arcing.
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