Semiconductor memory device and operation method thereof

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United States of America Patent

PATENT NO 8027205
APP PUB NO 20100165759A1
SERIAL NO

12489534

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Abstract

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A semiconductor memory device includes a strobe signal generator for receiving a write command and generating a write strobe signal that defines an activation period variably according to an operation frequency, and a data transfer unit for transferring data from an external device to an internal data line in response to the write strobe signal.

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Patent Owner(s)

Patent OwnerAddress
HYNIX SEMICONDUCTOR INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Byeong-Chan Gyeonggi-do, KR 5 28

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