Forming electroplated inductor structures for integrated circuits
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United States of America Patent
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Oct 4, 2011
Grant Date -
Jul 2, 2009
app pub date -
Dec 31, 2007
filing date -
Dec 31, 2007
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Abstract
Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a magnetic material on a substrate, wherein the magnetic material comprises rhenium, cobalt, iron and phosphorus, and annealing the magnetic material at a temperature below about 330 degrees Celsius, wherein the coercivity of the annealed magnetic material is below about 1 Oersted.
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