Semiconductor device manufacturing method and semiconductor manufacturing apparatus

United States of America Patent

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Oct 4, 2011
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Jun 25, 2009
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Sep 20, 2005
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Sep 20, 2005

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Abstract

ions and an oxidant, the hydrogen termination can be quickly carried out. In this case, the semiconductor surface is silicon having a (111) surface, a (110) surface, or a (551) surface.

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OHMI, TADAHIRO

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Inventor Name	Address	# of filed Patents	Total Citations
Akahori, Hiroshi	Miyagi, JP	69	1019
Ohmi, Tadahiro	Miyagi, JP	798	13051
Teramoto, Akinobu	Miyagi, JP	114	768

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Semiconductor device manufacturing method and semiconductor manufacturing apparatus

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United States of America Patent

11992230

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PATENT NO	8030182
APP PUB NO	20090162995A1
SERIAL NO	11992230
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
October 04, 2011	US,8030182,B2 US8030182B2	GRANTED PATENT AS SECOND PUBLICATION
June 25, 2009	US,20090162995,A1 US20090162995A1	FIRST PUBLISHED PATENT APPLICATION

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