Polishing compound for semiconductor integrated circuit device, polishing method and method for producing semiconductor integrated circuit device
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United States of America Patent
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Oct 4, 2011
Grant Date -
Mar 20, 2008
app pub date -
Sep 17, 2007
filing date -
Mar 16, 2005
priority date (Note) -
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Abstract
To provide a polishing technique with which in production of a semiconductor integrated circuit device, when a plane to be polished is polished, an appropriate polishing rate ratio of a polysilicon film to another material can be obtained, whereby high level planarization of a plane to be polished including a polysilicon film can be realized.A polishing compound for chemical mechanical polishing, containing cerium oxide particles, a water-soluble polyamine and water and having a pH within a range of from 10 to 13, is used.
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