Memory array with diode driver and method for fabricating the same
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United States of America Patent
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Oct 4, 2011
Grant Date -
Oct 1, 2009
app pub date -
Mar 31, 2008
filing date -
Mar 31, 2008
priority date (Note) -
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Abstract
A memory array with self-centered diode access devices results from a process in which diodes are formed in the fill material, each diode having a lightly-doped first layer of the same conductivity type as the conductive lines; a heavily doped second layer of opposite conductivity type; and a conductive cap. Self-aligned, and self-centered spacers in the self-aligned vias define pores that expose the conductive cap. Memory material is deposited within the pores, the memory material making contact with the conductive cap. A top electrode is formed in contact with the memory material.
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