Method for manufacturing high-stability resistors, such as high ohmic poly resistors, integrated on a semiconductor substrate
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United States of America Patent
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Oct 4, 2011
Grant Date -
Mar 25, 2010
app pub date -
Nov 24, 2009
filing date -
Dec 21, 2005
priority date (Note) -
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Abstract
A method for protecting a circuit component on a semiconductor substrate from a plasma etching or other removal process includes forming a screening layer over an auxiliary layer to conceal at least an area of the auxiliary layer that overlays at least a portion of the circuit component, such as for example a high-ohmic poly resistor. The method transfers a pattern defined by a mask onto the screening layer by selectively removing portions of the screening layer in accordance with the pattern. Portions of the auxiliary layer that are not protected by the screening layer are removed using a plasma gas selective to the auxiliary layer material, without removing the area of the auxiliary layer that overlays the portion of the circuit component, thereby protecting the circuit component from the plasma gas via the screening layer and auxiliary layer.
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