Multi-layered metal interconnection
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United States of America Patent
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Oct 4, 2011
Grant Date -
Sep 24, 2009
app pub date -
May 22, 2009
filing date -
Dec 14, 2005
priority date (Note) -
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Abstract
A multi-layered metal interconnection includes a diffusion barrier directly formed on a conductive layer, an etching stop layer directly formed on the diffusion barrier, at least one dielectric layer formed over the etch stop layer, at least one of a via formed in the at least one dielectric layer and a trench formed in the at least one dielectric layer.
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