Phase change memory program method without over-reset
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United States of America Patent
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Oct 11, 2011
Grant Date -
May 6, 2010
app pub date -
Nov 6, 2008
filing date -
Nov 6, 2008
priority date (Note) -
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Abstract
Memory devices and methods for operating such devices are described herein. A method as described herein includes applying a fixed sequence of voltage pulses across the memory cell of increasing pulse height to change the resistance state from the lower resistance state to the higher resistance state. The fixed sequence of voltage pulses cause increasing current through the phase change memory element until change to the higher resistance state occurs, and after the change the voltage pulses in the fixed sequence causing a voltage across the phase change memory element less than the threshold voltage.
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