Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same
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United States of America Patent
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Oct 18, 2011
Grant Date -
May 26, 2011
app pub date -
Nov 24, 2010
filing date -
Nov 26, 2009
priority date (Note) -
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Abstract
In a method of forming a capacitor, a seed stopper and a sacrificial layer is formed on an insulating interlayer having a plug therethrough. An opening is formed through the sacrificial layer and the seed stopper to expose the plug. A seed is formed on an innerwall of the opening. A lower electrode is formed covering the seed on the innerwall of the opening. The sacrificial layer and the seed are removed. A dielectric layer and an upper electrode are sequentially formed on the lower electrode.
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