Resistor random access memory cell with reduced active area and reduced contact areas
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United States of America Patent
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Oct 18, 2011
Grant Date -
Jan 20, 2011
app pub date -
Sep 23, 2010
filing date -
May 30, 2006
priority date (Note) -
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Abstract
A memory device has a sidewall insulating member with a sidewall insulating member length according to a first spacer layer thickness. A first electrode formed from a second spacer layer having a first electrode length according to a thickness of a second spacer layer and a second electrode formed from the second spacer layer having a second electrode length according to the thickness of the second spacer layer are formed on sidewalls of the sidewall insulating member. A bridge of memory material having a bridge width extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall insulating member, wherein the bridge comprises memory material.
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