Methods and apparatus for resputtering process that improves barrier coverage
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United States of America Patent
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Oct 25, 2011
Grant Date -
N/A
app pub date -
Jul 30, 2007
filing date -
Mar 13, 2001
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Abstract
Conductive or barrier material is deposited on a semiconductor substrate having recessed features by a method that has at least two operations. The first operation involves depositing a layer of the material on at least a portion of the field regions of the wafer. The second operation involves resputtering at least the layer residing on the field region of the wafer under high pressure. If the pressure is sufficiently high, momentum transfer reflection of the resputtered material will take place, such that at least some of the resputtered material is placed in the recessed features of the wafer. This approach can, among other advantages, offer improved step coverage and better utilization of the material.
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