Mixture for doping semiconductors
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United States of America Patent
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Oct 25, 2011
Grant Date -
Dec 25, 2008
app pub date -
May 31, 2006
filing date -
Jun 6, 2005
priority date (Note) -
Expired
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Abstract
A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.
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