Nonvolatile semiconductor memory device with advanced multi-page program operation

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8046525
APP PUB NO 20080189478A1
SERIAL NO

12021395

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Abstract

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A nonvolatile semiconductor memory device for an efficient program of multilevel data includes a memory cell array having a plurality of banks and a cache block corresponding to each of the plurality of banks. The cache block has a predetermined data storage capacity. A page buffer is included which corresponds to each of the plurality of banks. A programming circuit programs all of the plurality of banks except a last of said banks with page data. The page data is loaded through each page buffer and programmed into each cache block such that when page data for the last bank is loaded into the page buffer, the loaded page data and the page data programmed into the respective cache blocks are programmed into respective corresponding banks. Accordingly, the time taken in programming can be reduced without increasing a unit of program in a multilevel flash memory, thereby improving performance in a multilevel program of a nonvolatile semiconductor memory device.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chae, Dong-Hyuk Gwanak-gu, KR 45 693
Lim, Young-Ho Yongin-si, KR 97 2370

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