Method for forming interlayer insulating film in semiconductor device
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United States of America Patent
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Nov 1, 2011
Grant Date -
Mar 5, 2009
app pub date -
Aug 25, 2008
filing date -
Sep 5, 2007
priority date (Note) -
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Abstract
A method for forming an interlayer insulating film includes providing a semiconductor substrate having a first substrate region with a plurality of metal wiring and a second substrate region having no metal wiring, and then forming an insulating film dummy pattern in the second substrate region, wherein the insulating film dummy pattern has the same thickness as the metal wiring, and then forming an interlayer insulating film over the semiconductor substrate including the insulating film dummy pattern.
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