Distortion estimation and cancellation in memory devices
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United States of America Patent
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Nov 1, 2011
Grant Date -
Aug 21, 2008
app pub date -
May 10, 2007
filing date -
May 12, 2006
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Abstract
A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling interference causing the second voltage levels to differ from the respective first voltage levels. Cross-coupling coefficients, which quantify the cross-coupling interference among the analog memory cells, are estimated by processing the second voltage levels. The data stored in the group of analog memory cells is reconstructed from the read second voltage levels using the estimated cross-coupling coefficients.
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