Method of forming metal electrode of system in package
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United States of America Patent
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Nov 8, 2011
Grant Date -
Dec 25, 2008
app pub date -
Jun 17, 2008
filing date -
Jun 22, 2007
priority date (Note) -
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status (Latency Note)
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Abstract
A method for forming a metal electrode of a system in package of a system in package including a multilayer semiconductor device having semiconductor devices stacked in a plurality of layers. The method may include forming a through hole extending through the plurality of layers, forming a combustible material layer having high viscosity at a lower portion of the through hole in order to seal the lower portion thereof, and forming a through electrode by filling copper in the through hole. There is an effect of efficiently forming a through electrode having a large depth corresponding to the height of stacked semiconductor devices in the system in package. Filling copper in a through hole having a large depth-to-width ratio may be efficiently done by OSP coating, electrolysis copper plating, and electro Cu plating processes.
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