Phase change device having two or more substantial amorphous regions in high resistance state
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United States of America Patent
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Nov 15, 2011
Grant Date -
Jul 1, 2010
app pub date -
Mar 4, 2010
filing date -
May 8, 2008
priority date (Note) -
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Abstract
Memory devices are described herein along with method for operating the memory device. A memory cell as described herein includes a first electrode and a second electrode. The memory cell also comprises phase change material having first and second active regions arranged in series along an inter-electrode current path between the first and second electrode.
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