Chalcogenide layer etching method
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United States of America Patent
Stats
-
Nov 22, 2011
Grant Date -
Jul 5, 2007
app pub date -
Feb 23, 2006
filing date -
Dec 30, 2005
priority date (Note) -
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status (Latency Note)
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Abstract
A protective layer is deposited on a chalcogenide layer and a patterned photoresist layer is formed on the protective layer. The patterned photoresist layer and the protective layer are etched to form openings therethrough to the chalcogenide layer to create etched photoresist and etched protective layers. The etched photoresist layer is removed leaving at least a portion of the etched protective layer. The chalcogenide layer is etched through the openings in the etched protective layer.
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