Solar cell defect passivation method
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United States of America Patent
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Nov 22, 2011
Grant Date -
Mar 3, 2011
app pub date -
Aug 9, 2010
filing date -
Sep 3, 2009
priority date (Note) -
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Abstract
The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.
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