Ternary tungsten-containing resistive thin films
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United States of America Patent
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Nov 22, 2011
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N/A
app pub date -
Jan 30, 2009
filing date -
Jan 31, 2008
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Abstract
Heater elements made of high resistivity ternary and quaternary thin films containing three or more of W, C, O, N and Si are provided. The thin films have resistivities at least about 1000 μΩ-cm at 50 to 60 Angstroms. The ternary and quaternary films have improved stability over binary films on anneal. Methods of depositing the thin films are also provided. The methods involve depositing the film from an organometallic tungsten precursor under conditions such that a highly resistive, continuous film is formed.
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