Rewritable memory device based on segregation/re-absorption
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United States of America Patent
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Nov 22, 2011
Grant Date -
Jul 15, 2010
app pub date -
Jun 22, 2009
filing date -
Jan 14, 2009
priority date (Note) -
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Abstract
Memory devices described herein are programmed and erased by physical segregation of an electrically insulating layer out of a memory material to establish a high resistance state, and by re-absorption of at least a portion of the electrically insulating layer into the memory material to establish a low resistance state. The physical mechanism of programming and erasing includes movement of structure vacancies to form voids, and/or segregation of doping material and bulk material, to create the electrically insulating layer consisting of voids and/or dielectric doping material along an inter-electrode current path between electrodes.
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