Non-volatile, electrically-programmable memory

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8065467
APP PUB NO 20080052458A1
SERIAL NO

11844465

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Abstract

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A solid state mass storage device having a first storage area portion and a second storage area portion. The mass storage device including accessing means adapted to cause data to be stored in the first storage area portion in one of: only in memory cells belonging to columns of a first collection or only to columns of a second collection such that memory cells of the first storage area portion belonging to the first or second collection are left unprogrammed; or only in memory cells of even rows or only memory cells of odd row such that the memory cells of the first storage area belonging to the even or to the odd rows are left unprogrammed; or only in memory cells such that memory cells that are immediately adjacent to said memory cells in said row and column are left unprogrammed.

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Patent Owner(s)

Patent OwnerAddress
HYNIX SEMICONDUCTOR INCGYEONGGI DO LICHUAN CITY SOUTH KOREA ICHEON GYEONGGI-DO

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Micheloni, Rino Turate, IT 155 2761
Ravasio, Roberto Ponte San Pietro, IT 28 440

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