Semiconductor integrated circuit
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United States of America Patent
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Nov 29, 2011
Grant Date -
Apr 22, 2010
app pub date -
Jul 31, 2006
filing date -
Aug 2, 2005
priority date (Note) -
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Abstract
A semiconductor integrated circuit (1) comprises a substrate voltage control circuit (10A), a drain current adjuster (E1), a MOS device characteristic detection circuit (20), and a drain current compensator (E2). The substrate voltage control circuit (10A) has at least one substrate voltage supply MOS device (m1) for controlling the supply of the substrate voltage of the semiconductor integrated circuit (1). The drain current adjuster (E1) adjusts the drain current of the substrate voltage supply MOS device (m1) by controlling the substrate voltage of the substrate voltage supply MOS device (m1). The MOS device characteristic detection circuit (20) has a characteristic detection device (m2) for detecting the characteristics of the substrate voltage supply MOS device (m1). The drain current compensator (E2) corrects the drain current of the substrate voltage supply MOS device (m1) by controlling the substrate voltage of the substrate voltage supply MOS device (m1) according to the characteristics of the substrate voltage supply MOS device (m1) detected by the MOS device characteristic detection circuit (20).
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