Chemical vapor deposition method and system for semiconductor devices
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United States of America Patent
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Dec 6, 2011
Grant Date -
Feb 11, 2010
app pub date -
Aug 8, 2008
filing date -
Aug 8, 2008
priority date (Note) -
Expired
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Abstract
A method of and system for chemical vapor deposition of layers of material on substrates for producing semiconductor devices provides for continuous in-line processing. The method includes continuously conveying a plurality of substrates through a plurality of in-line deposition regions, continuously providing and distributing a chemical vapor at each region to deposit material for the layer, and continuously supplying a flow of chemical material for each region to provide the chemical vapor. The system includes a continuous in-line substrate conveyance apparatus for moving a plurality of substrates through a plurality of deposition regions, a deposition head for providing and distributing a chemical vapor at each of the regions to deposit material for the layers, and a chemical material supply apparatus for providing a flow of chemical materials to each of the heads for the chemical vapor.
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