Silicon based nanoscale crossbar memory
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United States of America Patent
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Dec 6, 2011
Grant Date -
Apr 29, 2010
app pub date -
Oct 20, 2009
filing date -
Oct 20, 2008
priority date (Note) -
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Abstract
The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second material. The first and the second array are oriented at an angle with each other. The array further includes a plurality of nanostructures of non-crystalline silicon disposed between a nanowire of the first material and a nanowire of the second material at each intersection of the two arrays. The nanostructures form a resistive memory cell together with the nanowires of the first and second materials.
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