Sea-of-fins structure on a semiconductor substrate and method of fabrication
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United States of America Patent
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Dec 13, 2011
Grant Date -
Dec 17, 2009
app pub date -
Aug 4, 2009
filing date -
Jul 20, 2005
priority date (Note) -
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Abstract
A semiconductor device and a method of fabricating a semiconductor device is disclosed, the method comprises including: forming etching an oxide layer to form a pattern of parallel oxide bars on a substrate; forming nitride spacers on side walls of the parallel oxide bars, with gaps remaining between adjacent nitride spacers; forming silicon pillars in the gaps; removing the nitride spacers to form a plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film.
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