Phase change memory with layered insulator
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United States of America Patent
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Dec 13, 2011
Grant Date -
Jun 25, 2009
app pub date -
Dec 20, 2007
filing date -
Dec 20, 2007
priority date (Note) -
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Abstract
A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating layers and the pores may be filled with heaters, chalcogenide layers, and electrodes in some embodiments. The use of the two different insulator layers enables embodiments where thermal losses may be reduced and an amorphous region may be maintained along the entire length of the phase change material layer.
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