Bipolar switching of phase change device
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United States of America Patent
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Dec 13, 2011
Grant Date -
Nov 12, 2009
app pub date -
Apr 29, 2009
filing date -
May 7, 2008
priority date (Note) -
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Abstract
Memory devices and methods for operating such devices are described herein. A method as described herein includes applying a reset bias arrangement to a memory cell to change the resistance state from the lower resistance state to the higher resistance state. The reset bias arrangement comprises a first voltage pulse. The method further includes applying a set bias arrangement to the memory cell to change the resistance state from the higher resistance state to the lower resistance state. The set bias arrangement comprises a second voltage pulse, the second voltage pulse having a voltage polarity different from that of the first voltage pulse.
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