Resistor random access memory cell with L-shaped electrode
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United States of America Patent
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Dec 20, 2011
Grant Date -
Aug 19, 2010
app pub date -
Apr 28, 2010
filing date -
May 30, 2006
priority date (Note) -
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Abstract
A phase change random access memory PCRAM device is described suitable for use in large-scale integrated circuits. An exemplary memory device has a pipe-shaped first electrode formed from a first electrode layer on a sidewall of a sidewall support structure. A sidewall spacer insulating member is formed from a first oxide layer and a second, “L-shaped,” electrode is formed on the insulating member. An electrical contact is connected to the horizontal portion of the second electrode. A bridge of memory material extends from a top surface of the first electrode to a top surface of the second electrode across a top surface of the sidewall spacer insulating member.
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