Polishing composition and polishing process
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United States of America Patent
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Dec 20, 2011
Grant Date -
Feb 7, 2008
app pub date -
Aug 1, 2007
filing date -
Aug 2, 2006
priority date (Note) -
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Abstract
To provide a polishing composition particularly useful for an application to polish a conductor layer made of copper in a semiconductor wiring process, and a polishing process employing it.M1, wherein M1 is a counter ion, a protection film forming agent different from the anionic surfactant, and at least one nonionic surfactant represented by the chemical formula R2-X2, wherein R2 is an alkyl group, and X2 is a polyoxyethylene group, a polyoxypropylene group or a poly(oxyethylene-oxypropylene) group, and having a HLB value of from 10 to 16.
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