Low on resistance CMOS “wave” transistor for integrated circuit applications

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United States of America Patent

PATENT NO 8080847
APP PUB NO 20090250765A1
SERIAL NO

12420435

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Abstract

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In one embodiment of the present invention an array of power transistors on a semiconductor chip has repeating patterns of two “wave” gates which have alternating longer and shorter horizontal sections which are offset mirror images of each other together with a third straight horizontal section. Alternating source and drain regions lie between adjacent gates. Contacts are located adjacent each side of sections of the “wave” gates which connect the ends of the horizontal sections of the “wave” gates.

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Patent Owner(s)

  • FAIRCHILD SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Leibiger, Steven Falmouth, US 10 69

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