Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
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United States of America Patent
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Dec 27, 2011
Grant Date -
Mar 4, 2010
app pub date -
Aug 29, 2008
filing date -
Aug 29, 2008
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Abstract
A metal film composed of multiple atomic layers continuously formed by atomic layer deposition of Ru and Ta or Ti includes at least a top section and a bottom section, wherein an atomic composition of Ru, Ta or Ti, and N varies in a thickness direction of the metal film. The atomic composition of Ru, Ta or Ti, and N in the top section is represented as Ru.sub.(x1)Ta/Ti.sub.(y1)N.sub.(z1) wherein an atomic ratio of Ru.sub.(x1)/(Ta/Ti.sub.(y1)) is no less than 15, and z1 is 0.05 or less. The atomic composition of Ru, Ta or Ti, and N in the bottom section is represented as Ru.sub.(x2)Ta/Ti.sub.(y2)N.sub.(z2) wherein an atomic ratio of Ru.sub.(x2)/(Ta/Ti.sub.(y2)) is more than zero but less than 15, and z2 is 0.10 or greater.
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