Diffusion barrier layer for MEMS devices
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United States of America Patent
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Dec 27, 2011
Grant Date -
Feb 25, 2010
app pub date -
Nov 6, 2009
filing date -
Oct 28, 2005
priority date (Note) -
Expired
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Abstract
Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.
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