Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same
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United States of America Patent
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Oct 9, 2012
Grant Date -
Feb 26, 2009
app pub date -
Aug 20, 2008
filing date -
Aug 20, 2008
priority date (Note) -
Withdrawn
status (Latency Note)
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Abstract
A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and crystallized using a metal catalyst, a gate insulating layer disposed on the semiconductor layer, a gate electrode disposed on the gate insulating layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to source and drain regions of the semiconductor layer through contact holes exposing predetermined regions of the source and drain regions of the semiconductor layer formed within the gate insulating layer and the interlayer insulating layer. A metal silicide including a metal that is different from the metal catalyst is present within a region of the semiconductor layer under the contact hole from the surface of the semiconductor layer to a predetermined depth.
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