Endpoint detection for photomask etching
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United States of America Patent
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Jan 10, 2012
Grant Date -
Jan 15, 2009
app pub date -
Oct 29, 2007
filing date -
Oct 30, 2006
priority date (Note) -
In Force
status (Latency Note)
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Abstract
Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detection. Enhanced process monitoring for photomask etching are achieved by the use of various optical measurement techniques for monitoring at different locations of the photomask.
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