Integrated circuit device with single crystal silicon on silicide and manufacturing method
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United States of America Patent
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Jan 10, 2012
Grant Date -
Jul 8, 2010
app pub date -
Jan 7, 2009
filing date -
Jan 7, 2009
priority date (Note) -
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Abstract
A silicide element separates a single crystal silicon node from an underlying silicon substrate, and is capable of acting as a conductive element for interconnecting devices on the device. The single crystal silicon node can act as one terminal of a diode, and a second semiconductor node on top of it can act as the other terminal of the diode. The single crystal silicon node can act as one of the terminals of the transistor, and second and third semiconductor nodes are formed in series on top of it, providing a vertical transistor structure, which can be configured as a field effect transistor or bipolar junction transistor. The silicide element can be formed by a process that consumes a base of a protruding single crystal element by silicide formation processes, while shielding upper portions of the protruding element from the silicide formation process.
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