High pressure apparatus and method for nitride crystal growth
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United States of America Patent
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Jan 17, 2012
Grant Date -
Dec 10, 2009
app pub date -
Jun 5, 2008
filing date -
Jun 5, 2008
priority date (Note) -
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Abstract
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. IN a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
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