Low operational current phase change memory structures
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United States of America Patent
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Jan 17, 2012
Grant Date -
Nov 4, 2010
app pub date -
Apr 30, 2009
filing date -
Apr 30, 2009
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Abstract
Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational current efficiency. As a result, the amount of heat generated within the lateral edges per unit value of current is increased relative to that of conventional mushroom-type memory cells. Therefore, the amount of current needed to induce phase change is reduced.
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