Reverse set with current limit for non-volatile storage
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United States of America Patent
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Jan 17, 2012
Grant Date -
Mar 31, 2011
app pub date -
Dec 8, 2010
filing date -
Jun 27, 2008
priority date (Note) -
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Abstract
A storage system includes a substrate, control circuitry on the substrate, a three dimensional memory array (above the substrate) that includes a plurality of reversible resistance-switching elements, and circuits for limiting the SET current for the reversible resistance-switching elements. The memory cell is SET in a reverse biased fashion.
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